Category: Power Solutions

SEOUL, South Korea, July 30, 2024 – Magnachip Semiconductor Corporation (“Magnachip” or “Company”) (NYSE: MX) announced the release of its 8th-generation ¹⁾MXT LV MOSFET (Metal Oxide Semiconductor Field Effect Transistor) for smartphone battery protection circuits.

Magnachip has introduced its proprietary Super-Short Channel FET II (SSCFET® II) technology for the first time in the Company’s new 12V Dual N-channel MOSFET (MDWC12D024PERH). SSCFET® II is Magnachip’s latest design technology that significantly reduces the channel length, thereby lowering the ²⁾R_SS(on).

Compared to the previous generation product of the same size, the R_SS(on) of this product is reduced by approximately 22%. This reduction decreases power loss, shortens smartphone charging times, and lowers the internal temperature of smartphones by about 12% in fast charging mode.

With global smartphone manufacturers enhancing AI capabilities in smartphones, the importance of MOSFET products is growing. Magnachip’s new 12V MXT LV MOSFET features high power efficiency and is optimized for a wide range of battery protection applications in premium smartphones, particularly on-device AI smartphones.

According to market research firm Omdia, shipments of on-device AI smartphones are expected to grow at an average annual rate of 50% from 2024 to 2028, reaching 606 million units in 2028.

“Following the development of Super-Short Channel FET I technology and the successful product rollout early last year, Magnachip has now introduced an upgraded Super-Short Channel FET II technology,” said YJ Kim, CEO of Magnachip. “We plan to continue developing innovative high-density cell trench technology and launch advanced power solutions targeting smartphones, smartwatches and earphones throughout the second half of this year.”

¹⁾MXT LV MOSFET (Magnachip eXtreme Trench Low Voltage MOSFET): Magnachip’s cutting-edge product portfolio of 12~40V trench MOSFETs.

²⁾R_SS(on): On resistance, the resistance value between sources of two protected MOSFETs during operation (ON).

Related Links

Power Solutions > MXT MOSFETs > 12V

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   Magnachip Unveils Its First 8th-Generation MXT LV MOSFET Designed with Super-Short Channel FET II

– The Company provides optimized solutions for the solar energy market with its diverse IGBT and ¹⁾MXT MV MOSFET products

SEOUL, South Korea, July 29, 2024 – Magnachip Semiconductor Corporation (“Magnachip” or “Company”) (NYSE: MX) announced today the completion of the development of its 1200V 75A Insulated Gate Bipolar Transistor (IGBT) in a TO-247PLUS package, designed for solar inverters. The Company plans to start mass production in October this year.

Magnachip entered the solar inverter market in 2020 by introducing the 1200V 40A IGBT (MBQ40T120QFS) and began offering the 650V 75A IGBT (MBQ75T65PEH) in 2022. Now, the Company unveils its latest 1200V 75A IGBT (MBQA75T120RFS), featuring its cutting-edge design technology and processes.

This new product, packaged in a TO-247PLUS with a wide heat spreader, improves heat dissipation as compared to the TO-247 package. Additionally, it enhances power efficiency by reducing conduction loss by over 14% compared to its previous generation. This improvement ensures stable operation even in overload conditions, thereby enhancing system reliability.

Moreover, this new IGBT product provides application design flexibility, as its performance can replace that of two 40A IGBTs. Another notable feature is the incorporation of a fast recovery anti-parallel diode, which quickly removes residual current to reduce switching losses and guarantees a maximum operating junction temperature of 175°C. Designed in accordance with the standards of the Joint Electron Device Engineering Council (JEDEC), this product is suitable for a wide range of applications requiring strict power ratings and high efficiency, including solar inverters, converters, uninterruptible power supply systems, and general-purpose inverters.

According to market research firm Omdia, the discrete IGBT and silicon-based MOSFET sectors in the renewable energy market are expected to grow at a compound annual growth rate of 15% from 2024 to 2028.

“With this new product launch, Magnachip’s solar energy power product lineup has been further strengthened and now boasts high-performance IGBTs and MXT MV MOSFETs that satisfy the technical requirements of applications in the solar energy market,” said YJ Kim, CEO of Magnachip. “We will continue to supply innovative power solutions targeting renewable energy applications and capitalize on growth opportunities within the industry.”

¹⁾MXT MV MOSFET (Magnachip eXtreme Trench Medium Voltage MOSFET): Magnachip’s cutting-edge product portfolio of 40~200V trench MOSFETs.

²⁾R_DS(ON)：the resistance between the drain and the source of MOSFETs during on-state operation.

Related Links

Power Solutions > Discrete IGBTs

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   Magnachip Expands Solar Energy Power Product Lineup with the Release of 1200V IGBT in TO-247PLUS Package

– Magnachip’s automotive MOSFET and IGBT product families have garnered design wins from a number of major global automakers

– The newly launched 40V MXT MV MOSFET is well-suited for motor control systems of vehicles

SEOUL, South Korea, April 30, 2024 – Magnachip Semiconductor Corporation (“Magnachip” or “Company”) (NYSE: MX) announced today the release of its new 40V MXT MV MOSFET¹. With this latest addition, the Company now offers 13 MOSFET and IGBT products for a wide range of automotive applications (see the tables below).

As the automotive industry adopts advanced technologies such as autonomous driving and enhanced infotainment systems, the demand for high-efficiency power solutions increases. According to Omdia, a global market research firm, the automotive power discrete market is projected to grow 14% annually from 2024 to 2027.

Magnachip entered the automotive sector in April 2022 with its first 40V MOSFET and has since broadened its product offerings by releasing 30V, -40V (P-channel MOSFET²), 60V, and 250V MOSFETs for vehicles. In September 2023, the Company introduced 650V and 1200V IGBTs for positive temperature coefficient heaters and e-compressors for automotive. In the last two years, Magnachip’s power products have been integrated into vehicles of major automotive manufacturers in the United States, Korea, Japan and China.

Leveraging its technological capabilities, Magnachip now unveils this 40V MXT MV MOSFET (AMDD040N055RH) in the Decawatt Package (DPAK). The new MOSFET offers exceptional versatility for various automotive applications, such as motor control systems or power seat modules and electric stability control systems for reverse battery protection.

“Magnachip is committed to supplying premium products that meet the evolving demands of the automotive sector,” said YJ Kim, CEO of Magnachip. “Our technical innovation, coupled with a steady supply and a comprehensive range of product offerings, will strengthen our foothold in the automotive industry and broaden our global market presence.”

¹ MXT MV MOSFET (Magnachip eXtreme Trench Medium Voltage MOSFET): Magnachip’s cutting-edge product portfolio of 40~200V trench MOSFETs

² P-channel MOSFET: A P-channel MOSFET requires the gate voltage to be lower than the source to turn on, in contrast to an N-channel MOSFET. Therefore, the drain-source voltage is generally expressed as a negative value (ex. -40V).

Related Links

Please find further details and datasheet about Magnachip’s Automotive Solutions at https://www.magnachip.com/automotive-solutions.

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Magnachip Boosts Its Extensive Automotive Product Lineup With the Release of a New 40V MXT MV MOSFET

– Developed with highly rugged trench MOSFET technology, the new 30V MXT LV MOSFET ensures a stable power supply for electric power steering

SEOUL, South Korea, December 18, 2023 – Magnachip Semiconductor Corporation (“Magnachip” or “Company”) (NYSE: MX) announced today that the Company has begun full-scale mass production of its new 30V MXT LV Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs)* used in Electronic Control Units (ECUs) of Electric Power Steering (EPS) systems. This MOSFET product is being used by a global automaker.

Magnachip’s new automotive 30V MXT LV MOSFET

The new 30V MXT LV MOSFET provides a stable power supply to EPS, assisting a vehicle’s directional control through an electric motor. This product also adheres to rigorous AEC-Q101 standards and guarantees a wide operating junction temperature range between -55°C to 175°C.

The new product incorporates a highly rugged trench MOSFET structure in a thick gate oxide, which offers low resistance and excellent switching characteristics. These features reduce switching noise in applications and enhance system performance with high power efficiency. Additionally, the reduced product size, enabled by applying a PDFN 33 package of 3.3mm x 3.3mm, facilitates flexible design options for ECUs.

“Magnachip’s new compact and highly reliable MOSFET for EPSs showcases our differentiated technological capabilities,” said YJ Kim, CEO of Magnachip. “We will actively expand in the automotive sector with our innovative power solutions and stringent quality control procedures.”

* MXT LV MOSFET (Magnachip eXtreme Trench Low Voltage MOSFET): Magnachip’s cutting-edge product portfolio of 12~40V trench MOSFETs

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Power Solutions > MXT MOSFETs > 30V

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   Magnachip Commences Full-Scale Mass Production of New 30V MXT LV MOSFET for Electric Power Steering Systems

– The company expands its 8^th-generation MXT MV MOSFET product portfolio with the addition of newly packaged 150V MXT MV MOSFETs in D²PAK-7L and PDFN56

SEOUL, South Korea, October 10, 2023 – Magnachip Semiconductor Corporation (“Magnachip” or “Company”) (NYSE: MX) announced today the launch of two new 150V *MXT MV Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs), using its 8^th-generation trench MOSFET technology.

Energy efficiency is crucial in high-power devices for reducing power consumption and ensuring stability. These newly released 8^th-generation 150V MXT MV MOSFETs (MDES15N056PTRH, MDU150N113PTVRH) were developed by leveraging Magnachip’s cutting-edge trench MOSFET technology. In particular, the R_DS(on) (the resistance value between the drain and the source of MOSFETs during on-state operation) of MDES15N056PTRH was reduced by 22% compared to the previous generation, thereby significantly enhancing energy efficiency in applications.

By improving the core cell and termination design, the Figure of Merit (FOM: R_DS(on) x Qg) of MDES15N056PTRH and MDU150N113PTVRH has been improved by 23% and 39%, respectively, compared to the previous version. Furthermore, the adoption of surface-mount type packages, such as D²PAK-7L (TO-263-7L) and PDFN56, reduces MOSFET sizes, enabling flexible design of various applications, such as motor controllers, battery management systems (BMSs), residential solar inverters and industrial power supplies.

“Following the introduction of five 8^th-generation 200V and 150V MOSFETs last year, we are pleased to now release two additional 150V MXT MV MOSFET product offerings in new packages,” said YJ Kim, CEO of Magnachip. “Magnachip will continue to expand its high-efficiency MXT MOSFET product portfolio, including new releases based on 180nm microfabrication technology in the near future.”

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*MXT MV MOSFET (Magnachip eXtreme Trench Medium Voltage MOSFET): Magnachip’s cutting-edge product portfolio of 40~200V trench MOSFETs

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– Magnachip commences full-scale mass production of 1200V and 650V IGBTs for PTC heaters of electric vehicles

SEOUL, South Korea, September 11, 2023 – Magnachip Semiconductor Corporation (“Magnachip” or “Company”) (NYSE: MX) announced today the launch of its 1200V and 650V Insulated Gate Bipolar Transistors (IGBTs), designed for the positive temperature coefficient (PTC) heaters of electric vehicles (EVs).

Built upon Magnachip’s cutting-edge Field Stop Trench technology, the newly introduced AMBQ40T120RFRTH (1200V) and AMBQ40T65PHRTH (650V) offer a minimum short-circuit withstand time of 10µs. This remarkable level of ruggedness enables PTC heaters to be protected from a permanent failure in the event of overcurrent conditions.

Furthermore, the thick and large heat sink of the TO-247 package allows these new IGBTs to excel in heat dissipation. Therefore, these IGBTs are well-suited for applications requiring high power and efficiency, such as both the upper and lower sides of power management integrated circuits of PTC heaters.

“Since early last year, Magnachip has released high-performance automotive power solutions that adhere to the stringent AEC-Q101 standards,” said YJ Kim, CEO of Magnachip. “Now that we have successfully released our first IGBT products for EVs, we will continue to expand our product lineup to meet the diverse needs of the EV market and cater to the demands of our valued customers.”

Related Links

Power Solutions > IGBT Chip for Standard Module > 1200V

In the Media

    Magnachip Targets Electric Vehicle Market with New 1200V and 650V IGBTs Featuring Advanced Field Stop Trench Technology

SEOUL, South Korea, July 10, 2023 – Magnachip Semiconductor Corporation (“Magnachip” or “Company”) (NYSE: MX) announced today that the Company has released four new MXT LV Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs)^*, using Super-Short Channel technology, to further expand Magnachip’s seventh-generation MXT LV MOSFET line-up for battery protection circuits of mobile devices.

Super-Short Channel is Magnachip’s latest design technology to reduce R_on (the resistance of MOSFETs during on-state operation) by shortening the channel length between the source and the drain. The R_on of these new MOSFETs has been reduced by 24~40%, compared to previous generations, and as a result, the battery performance is improved with low power losses when a battery is charging or discharging.

In addition, Magnachip provides customized design service for these products, based on the application specifications and battery capacities, so the sizes of the MOSFETs can be reduced by 5 to 20% respectively.

With these technical capabilities, flexible design and compact size options, the extended MXT LV MOSFET line-up satisfies the various technical requirements of a wide range of mobile devices, from premium foldable phones to wireless earphones.

“Magnachip has released five new MXT LV MOSFETs for battery protection circuits so far this year,” said YJ Kim, CEO of Magnachip.  “We will continue to create premium MOSFETs that offer great power efficiency and outstanding performance for mobile devices to solidify our presence in the market.”

^* MXT LV MOSFET (Magnachip eXtreme Trench Low Voltage MOSFET): Magnachip’s cutting-edge product portfolio of 12~40V trench MOSFETs

Product features

• 7^th–generation silicon trench technology
• Reduced R_on by approximately 24%~40% compared to the previous generations
• Enhanced switching speed through low total gate charge
• Outstanding thermal properties
• Solutions for a wide range of mobile devices