Category: Power Solutions

– Developed with highly rugged trench MOSFET technology, the new 30V MXT LV MOSFET ensures a stable power supply for electric power steering

 

SEOUL, South Korea, December 18, 2023 – Magnachip Semiconductor Corporation (“Magnachip” or “Company”) (NYSE: MX) announced today that the Company has begun full-scale mass production of its new 30V MXT LV Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs)* used in Electronic Control Units (ECUs) of Electric Power Steering (EPS) systems. This MOSFET product is being used by a global automaker.

Magnachip’s new automotive 30V MXT LV MOSFET

 

The new 30V MXT LV MOSFET provides a stable power supply to EPS, assisting a vehicle’s directional control through an electric motor. This product also adheres to rigorous AEC-Q101 standards and guarantees a wide operating junction temperature range between -55°C to 175°C.

The new product incorporates a highly rugged trench MOSFET structure in a thick gate oxide, which offers low resistance and excellent switching characteristics. These features reduce switching noise in applications and enhance system performance with high power efficiency. Additionally, the reduced product size, enabled by applying a PDFN 33 package of 3.3mm x 3.3mm, facilitates flexible design options for ECUs.

“Magnachip’s new compact and highly reliable MOSFET for EPSs showcases our differentiated technological capabilities,” said YJ Kim, CEO of Magnachip. “We will actively expand in the automotive sector with our innovative power solutions and stringent quality control procedures.”

 

 

 

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* MXT LV MOSFET (Magnachip eXtreme Trench Low Voltage MOSFET): Magnachip’s cutting-edge product portfolio of 12~40V trench MOSFETs

 

 

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Power Solutions > MXT MOSFETs > 30V

 

 

In the Media

   Magnachip Commences Full-Scale Mass Production of New 30V MXT LV MOSFET for Electric Power Steering Systems

 

– The company expands its slim form factor product portfolio by introducing two 650V SJ MOSFETs packaged in a PDFN88

 

SEOUL, South Korea, October 31, 2023 – Magnachip Semiconductor Corporation (“Magnachip” or “Company”) (NYSE: MX) announced today that the Company has begun mass production of two new 650V Super Junction Metal-Oxide-Semiconductor Field-Effect Transistors (SJ MOSFETs) offerings.

 

These two 650V SJ MOSFETs (MMUB65R090RURH, MMUB65R115RURH) utilize an innovative PDFN88 package, which significantly reduces their thickness and size. The thickness has been reduced by approximately 81% compared to D²PAK products and 63% compared to DPAK products, while the overall footprint has been reduced to about 41% of D²PAK SJ MOSFETs.

These new SJ MOSFETs — upgraded by the PDFN88 package — offer excellent design flexibility, efficient heat dissipation, and low R_DS(on) (the resistance value between the drain and the source of MOSFETs during on-state operation) characteristics. As a result, they are well-suited for various applications that require compact size and high efficiency, such as OLED TVs, servers, lighting products, laptop chargers and adapters.

 

 

“Magnachip will continue to develop high-performance power solutions enhanced by new packaging technology, building upon the successful mass production of these 650V SJ MOSFET products,” said YJ Kim, CEO of Magnachip. “We aim to drive expansion in the electronics market through our extended product portfolio and rigorous quality control.”

 

 

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Power Solutions > SJ MOSFETs > 650V

 

 

In the Media

     Magnachip Commences Mass Production of Two New 650V SJ MOSFETs with a Slim Form Factor

 

– The new 600V SJ MOSFET achieves a low R_DS(on) of 175mΩ and effectively meets the technical requirements of servers and OLED TVs

 

SEOUL, South Korea, October 30, 2023 – Magnachip Semiconductor Corporation (“Magnachip” or “Company”) (NYSE: MX) announced today that the Company released its 6^th-generation 600V Super Junction Metal Oxide Semiconductor Field Effect Transistor (SJ MOSFET) enhanced with microfabrication technology.

 

This 6^th-generation 600V SJ MOSFET (MMD60R175S6ZRH) was built on the 180nm microfabrication process and Magnachip’s latest design technology. This sophisticated technology improves upon the previous generation of SJ MOSFETs by narrowing the cell-pitches by 50% and lowering the R_DS(on) (On resistance: the resistance value between the drain and the source of MOSFETs during on-state operation) by 42%. As a result, this product comes in the same Decawatt Package (DPAK), while offering the low R_DS(on) of 175mΩ and outstanding power density.

Furthermore, the total gate charge is lowered by approximately 29% compared to the previous generation, resulting in reduced switching loss and enhanced power efficiency. The power efficiency is in fact one of the key features of this product, as it gives product designers flexibility with regards to various applications. In addition, a Zener diode is embedded between the gate and the source to strengthen the ruggedness and reliability of the MOSFET in an application and prevent it from sustaining damage caused by external surges or electrostatic discharges.

With its high efficiency, flexible design and reliability, this new 600V SJ MOSFET can be used in a wide range of applications, such as servers, OLED TVs and laptop fast chargers. Omdia, a global market research firm, estimates that worldwide server shipments will grow by 8% annually from 2023 to 2027, while global OLED TV shipments will increase 11% every year, reaching a total of 9.3 million units in 2027.

“Following the launch of this MOSFET, Magnachip plans to unveil additional 6^th-generation SJ MOSFETs, including those with a fast recovery body diode, in 2024,” said YJ Kim, CEO of Magnachip. “Aligned with customer demand, our technical innovation will further strengthen our industry presence and global market penetration.”

 

 

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Power Solutions > SJ MOSFETs > 600V

 

 

In the Media

     Magnachip Introduces 6th-Generation 600V SJ MOSFET Developed with Cutting-Edge Microfabrication Technology

– The company expands its 8^th-generation MXT MV MOSFET product portfolio with the addition of newly packaged 150V MXT MV MOSFETs in D²PAK-7L and PDFN56

 

SEOUL, South Korea, October 10, 2023 – Magnachip Semiconductor Corporation (“Magnachip” or “Company”) (NYSE: MX) announced today the launch of two new 150V *MXT MV Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs), using its 8^th-generation trench MOSFET technology.

 

Energy efficiency is crucial in high-power devices for reducing power consumption and ensuring stability. These newly released 8^th-generation 150V MXT MV MOSFETs (MDES15N056PTRH, MDU150N113PTVRH) were developed by leveraging Magnachip’s cutting-edge trench MOSFET technology. In particular, the R_DS(on) (the resistance value between the drain and the source of MOSFETs during on-state operation) of MDES15N056PTRH was reduced by 22% compared to the previous generation, thereby significantly enhancing energy efficiency in applications.

By improving the core cell and termination design, the Figure of Merit (FOM: R_DS(on) x Qg) of MDES15N056PTRH and MDU150N113PTVRH has been improved by 23% and 39%, respectively, compared to the previous version. Furthermore, the adoption of surface-mount type packages, such as D²PAK-7L (TO-263-7L) and PDFN56, reduces MOSFET sizes, enabling flexible design of various applications, such as motor controllers, battery management systems (BMSs), residential solar inverters and industrial power supplies.

“Following the introduction of five 8^th-generation 200V and 150V MOSFETs last year, we are pleased to now release two additional 150V MXT MV MOSFET product offerings in new packages,” said YJ Kim, CEO of Magnachip. “Magnachip will continue to expand its high-efficiency MXT MOSFET product portfolio, including new releases based on 180nm microfabrication technology in the near future.”

 

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*MXT MV MOSFET (Magnachip eXtreme Trench Medium Voltage MOSFET): Magnachip’s cutting-edge product portfolio of 40~200V trench MOSFETs

 

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Power Solutions > MXT MOSFETs > 150V

 

 

In the Media

     Magnachip Unveils New 8th-Generation 150V MXT MV MOSFETs

     Magnachip Introduces More MOSFET Package Types

– Magnachip commences full-scale mass production of 1200V and 650V IGBTs for PTC heaters of electric vehicles

 

SEOUL, South Korea, September 11, 2023 – Magnachip Semiconductor Corporation (“Magnachip” or “Company”) (NYSE: MX) announced today the launch of its 1200V and 650V Insulated Gate Bipolar Transistors (IGBTs), designed for the positive temperature coefficient (PTC) heaters of electric vehicles (EVs).

 

Built upon Magnachip’s cutting-edge Field Stop Trench technology, the newly introduced AMBQ40T120RFRTH (1200V) and AMBQ40T65PHRTH (650V) offer a minimum short-circuit withstand time of 10µs. This remarkable level of ruggedness enables PTC heaters to be protected from a permanent failure in the event of overcurrent conditions.

Furthermore, the thick and large heat sink of the TO-247 package allows these new IGBTs to excel in heat dissipation. Therefore, these IGBTs are well-suited for applications requiring high power and efficiency, such as both the upper and lower sides of power management integrated circuits of PTC heaters.

“Since early last year, Magnachip has released high-performance automotive power solutions that adhere to the stringent AEC-Q101 standards,” said YJ Kim, CEO of Magnachip. “Now that we have successfully released our first IGBT products for EVs, we will continue to expand our product lineup to meet the diverse needs of the EV market and cater to the demands of our valued customers.”

 

Related Links

Power Solutions > IGBT Chip for Standard Module > 1200V

 

 

In the Media

    Magnachip Targets Electric Vehicle Market with New 1200V and 650V IGBTs Featuring Advanced Field Stop Trench Technology

SEOUL, South Korea, July 10, 2023 – Magnachip Semiconductor Corporation (“Magnachip” or “Company”) (NYSE: MX) announced today that the Company has released four new MXT LV Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs)^*, using Super-Short Channel technology, to further expand Magnachip’s seventh-generation MXT LV MOSFET line-up for battery protection circuits of mobile devices.

 

 

Super-Short Channel is Magnachip’s latest design technology to reduce R_on (the resistance of MOSFETs during on-state operation) by shortening the channel length between the source and the drain. The R_on of these new MOSFETs has been reduced by 24~40%, compared to previous generations, and as a result, the battery performance is improved with low power losses when a battery is charging or discharging.

In addition, Magnachip provides customized design service for these products, based on the application specifications and battery capacities, so the sizes of the MOSFETs can be reduced by 5 to 20% respectively.

With these technical capabilities, flexible design and compact size options, the extended MXT LV MOSFET line-up satisfies the various technical requirements of a wide range of mobile devices, from premium foldable phones to wireless earphones.

“Magnachip has released five new MXT LV MOSFETs for battery protection circuits so far this year,” said YJ Kim, CEO of Magnachip.  “We will continue to create premium MOSFETs that offer great power efficiency and outstanding performance for mobile devices to solidify our presence in the market.”

 

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^* MXT LV MOSFET (Magnachip eXtreme Trench Low Voltage MOSFET): Magnachip’s cutting-edge product portfolio of 12~40V trench MOSFETs

 

Product features

• 7^th–generation silicon trench technology
• Reduced R_on by approximately 24%~40% compared to the previous generations
• Enhanced switching speed through low total gate charge
• Outstanding thermal properties
• Solutions for a wide range of mobile devices

– The 40V MXT MOSFET with R_DS(on) as low as 1.4mΩ enables effective kinetic energy recovery in cars

 

 SEOUL, South Korea, June 12, 2023 – Magnachip Semiconductor Corporation (“Magnachip” or “Company”) (NYSE: MX) announced today that the Company has begun mass production of its new 40V MXT Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET)1 for automotive energy recovery systems. This product is used in the automobile of a global automaker.

 

 

An automotive energy recovery system stores a vehicle’s kinetic energy while braking and uses the recovered energy for functions such as air conditioning or audio systems afterwards. Therefore, this feature improves fuel economy and reduces emissions.

Built on a Power Dual Flat No-lead (PDFN) 56 package with enhanced design of the core cells and terminations, the 40V MXT MOSFET (AMDU040N014VRH) offers R_DS(on)2 as low as 1.4mΩ to enhance the efficiency of kinetic energy recovery. In addition, a guaranteed operating junction temperature up to 175°C and a high level of avalanche ruggedness increase the power density and efficiency of the energy recovery system.

With the application of the PDFN56 package, the size of this new MOSFET was reduced by approximately 80%, as compared to other 40V MOSFET products designed with a Decawatt Package (DPAK). As a PDFN56 package is widely used in the automotive sector, the new product is well-suited for various applications such as reverse voltage protection circuits and brushless direct current motors of internal combustion engines and regenerative braking systems of electric vehicles.

“We are pleased to deliver another innovative automotive power solution, which is fully AEC – Q101 qualified for its performance and stability,” said YJ Kim, CEO of Magnachip. “Leveraging our heritage of innovative technology, Magnachip will continue to develop premium products that satisfy the diverse and changing market requirements of the automotive market.”

 

 

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¹ MXT MOSFET (Magnachip eXtreme Trench MOSFET): Magnachip’s cutting-edge product portfolio of trench MOSFETs, including low and medium voltage (12V to 200V) MOSFETs

² R_DS(on): On resistance, the resistance value between the drain and the source of MOSFETs during on-state operation

 

– Magnachip introduces new 600V SJ MOSFET with R_DS(on)* as low as 44mΩ for EV chargers and servers

SEOUL, South Korea, May 2, 2023 /PRNewswire/ — Magnachip Semiconductor Corporation (“Magnachip” or “Company”) (NYSE: MX) announced today that the Company has released a new family of 600V Super Junction Metal Oxide Semiconductor Field Effect Transistors (SJ MOSFETs) consisting of nine distinct products featuring proprietary design technology.

 

 

Magnachip’s proprietary design provides specific on-resistance (R_SP) reduction of about 10%, and this result was achieved while maintaining the same cell-pitches of previous generation MOSFETs.

In addition, the new product family of 600V SJ MOSFETs is equipped with a fast recovery body diode. This diode technology significantly enhances system efficiency with reduced reverse recovery time (t_rr) and switching loss. Therefore, the figure of merit to evaluate general performance of MOSFETs was improved by more than 10% compared to the previous generation. As such, these 600V SJ MOSFETs can be used widely in industrial applications, such as solar inverters, energy storage systems, uninterruptible power supply systems, and a variety of electronics.

Among these new MOSFETs, the MMQ60R044RFTH product offers an exceptionally low R_DS(on) of 44mΩ, making it an optimal choice for electric vehicle chargers and servers. Omdia, a global market research firm, estimates that the compound annual growth rates of Si MOSFET markets for hybrid & electric vehicles and servers will be 11% and 7%, respectively, from 2023 to 2026.

“Now that we have introduced these 600V SJ MOSFET products, we are aiming to unveil new 650V and 700V SJ MOSFET products with fast recovery body diode in the second half of 2023,” said YJ Kim, CEO of Magnachip. “These new MOSFETs represent a notable achievement for the Company, and we will build upon this success to deliver next-generation power solutions for rapidly changing market requirements and customer expectations.”

 

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* R_DS(on): On resistance, the resistance between the drain and the source of MOSFETs during on-state operation.

 

New Family of 600V SJ MOSFET Products

 

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Power Solutions > SJ MOSFETs > 600V

 

 

In the Media

     Magnachip Debuts New Family of 600V SJ MOSFET Products Featuring Fast Recovery Body Diodes

– The PDFN56 dual package enables small footprint and low conduction losses

 

SEOUL, South Korea, March 21, 2023 – Magnachip Semiconductor Corporation (“Magnachip”) (NYSE: MX) announced today that the company began full-scale mass production of its new 40V MXT Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET)1 optimized for the Electric Water Pumps (EWPs) and Electric Oil Pumps (EOPs) in electric vehicles (EVs).

 

 

This 40V MXT MOSFET (AMDUA040N070RH) comes in a Power Dual Flat No-lead (PDFN) 56 dual package to reduce the printed circuit board size by 50%, as compared to using two 40V single-packaged MOSFETs. The compact size provides great flexibility in system design and, as a result, AMDUA040N070RH is well-suited to EWPs, EOPs and even the power seat modules of EVs.

The low R_DS(on)2 enabled by the PDFN56 package reduces conduction losses, which means applications can be controlled efficiently. In addition, AMDUA040N070RH is fully AEC – Q101 qualified for its performance and stability, because of the enhanced design of its core cells and terminations for automotive applications.

Omdia, a global market research firm, estimates that the Si MOSFET market for hybrid and EVs will grow 11% annually from 2023 to 2026.

“Since 2008 we have strengthened our technological capabilities in the power solutions area” said YJ Kim, CEO of Magnachip. “As a provider of high-performance MOSFETs, Magnachip will continue to deliver innovative solutions to serve the growing demand for eco-friendly applications.”

 

 

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¹ MXT MOSFET (Magnachip eXtreme Trench MOSFET): Magnachip’s cutting-edge product portfolio of trench MOSFETs, including low and medium voltage (12V to 200V) MOSFETs

² R_DS(on): On resistance, the resistance value between the drain and the source of MOSFETs during on-state operation

 

SEOUL, South Korea, March 2, 2023 – Magnachip Semiconductor Corporation (“Magnachip”) (NYSE: MX) announced today that the company has released two seventh-generation MXT Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs)¹, built on its Super-Short Channel technology, for the battery protection circuit modules in smartphones.

 

 

Super-Short Channel is Magnachip’s latest design technology to shorten the channel length between the source and the drain to significantly reduce R_DS(on)² and conduction losses during on-state operation. Magnachip is applying this technology first to the newly-released 12V MOSFET (MDWC12D028ERH) and 24V MOSFET (MDWC24D031ERH).

Thanks to Super-Short Channel technology, the sizes of these new MOSFETs have been reduced by 20%, while the R_DS(on) of MDWC12D028ERH and MDWC24D031ERH is lowered by 40% and 24%, respectively, compared to the previous versions. With these enhanced product features, power loss is reduced when a battery is charging or discharging and a low operating temperature can be maintained for fast battery charging.

Magnachip plans to release compact-sized Super-Short Channel MXT MOSFETs with great power efficiency for the small batteries of wearable devices, such as smart watches and earphones, in the second half of 2023.

“The new Super-Short Channel technology has taken the performance of MXT MOSFETs to the next level.” said YJ Kim, CEO of Magnachip. “Magnachip will continue our efforts to advance technological innovation and deliver premium power management solutions satisfying the diverse and changing requirements of mobile device manufacturers.”

 

 

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¹ MXT MOSFET (Magnachip eXtreme Trench MOSFET): Magnachip’s cutting-edge product portfolio of trench MOSFETs, including low and medium voltage (12V to 200V) MOSFETs

² R_DS(on): On resistance, the resistance value between the drain and the source of MOSFETs during on-state operation

 

 

 

In the Media

  Magnachip Unveils Super-Short Channel MXT MOSFETs for Smartphone Battery Protection Circuit Modules