Category: Power Solutions

SEOUL, South Korea, June 10, 2024 – Magnachip Mixed-Signal, Ltd. (“MMS” or the “Company”) announced today the release of a multi-functional Power Management Integrated Circuit (PMIC) and a multi-channel level shifter to regulate different voltages and signals within display panels in IT devices.

 

 

As a subsidiary of Magnachip Semiconductor Corporation (“Magnachip”), MMS has been developing and supplying a wide range of power ICs, including back light unit LED drivers for TVs and LED lighting drivers, for over 10 years. The quality of the Company’s products has been validated through successful cooperation with leading TV manufacturers, OLED panel manufacturers and smartphone manufacturers, enabling MMS to expand its customer base globally.

The new products introduced today feature PMIC and level-shifter technology stemming from Magnachip’s research and development activities since 2019, and they provide the benefits of enhanced efficiency, low power consumption, multi-functionality and multi-channel capability.

The multi-functional PMIC was developed as a one-chip solution that integrates: a built-in controller, switches, logic circuit, two boost regulators, two negative low-dropout regulators, three high-current regulators for voltage down and two positive op-amps. With I²C*, this PMIC can control dynamic voltage management, a built-in on/off timer, protection circuits and switching frequency transition. As a result, the new PMIC enhances efficiency and reduces power consumption in applications. Therefore, the power required for the operation of high-end display panels in IT devices will be stably converted and distributed.

The new multi-channel level shifter is specially designed to regulate turn-on/off voltages for over 24 channels and efficiently manage voltage signals. Consequently, this level shifter fully satisfies the demanding channel requirements of high-resolution display panels and even UHD panels.

“We believe the IT display panel industry will benefit greatly from these new premium power solutions from MMS,” said YJ Kim, CEO of Magnachip. “We will continue the Company’s legacy of success with product development, production and technical support in a timely manner.”

 

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* I²C: alternatively known as I2C or IIC, is a synchronous, multi-controller/multi-target, single-ended, serial communication bus.

 

 

 

In the Media

   Magnachip Mixed-Signal Unveils Power Management IC and Level Shifter for Display Panels in IT Devices

– Magnachip’s automotive MOSFET and IGBT product families have garnered design wins from a number of major global automakers

– The newly launched 40V MXT MV MOSFET is well-suited for motor control systems of vehicles

 

SEOUL, South Korea, April 30, 2024 – Magnachip Semiconductor Corporation (“Magnachip” or “Company”) (NYSE: MX) announced today the release of its new 40V MXT MV MOSFET¹. With this latest addition, the Company now offers 13 MOSFET and IGBT products for a wide range of automotive applications (see the tables below).

As the automotive industry adopts advanced technologies such as autonomous driving and enhanced infotainment systems, the demand for high-efficiency power solutions increases. According to Omdia, a global market research firm, the automotive power discrete market is projected to grow 14% annually from 2024 to 2027.

Magnachip entered the automotive sector in April 2022 with its first 40V MOSFET and has since broadened its product offerings by releasing 30V, -40V (P-channel MOSFET²), 60V, and 250V MOSFETs for vehicles. In September 2023, the Company introduced 650V and 1200V IGBTs for positive temperature coefficient heaters and e-compressors for automotive. In the last two years, Magnachip’s power products have been integrated into vehicles of major automotive manufacturers in the United States, Korea, Japan and China.

Leveraging its technological capabilities, Magnachip now unveils this 40V MXT MV MOSFET (AMDD040N055RH) in the Decawatt Package (DPAK). The new MOSFET offers exceptional versatility for various automotive applications, such as motor control systems or power seat modules and electric stability control systems for reverse battery protection.

“Magnachip is committed to supplying premium products that meet the evolving demands of the automotive sector,” said YJ Kim, CEO of Magnachip. “Our technical innovation, coupled with a steady supply and a comprehensive range of product offerings, will strengthen our foothold in the automotive industry and broaden our global market presence.”

 

 

 

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¹ MXT MV MOSFET (Magnachip eXtreme Trench Medium Voltage MOSFET): Magnachip’s cutting-edge product portfolio of 40~200V trench MOSFETs

² P-channel MOSFET: A P-channel MOSFET requires the gate voltage to be lower than the source to turn on, in contrast to an N-channel MOSFET. Therefore, the drain-source voltage is generally expressed as a negative value (ex. -40V).

 

 

 

Related Links

Please find further details and datasheet about Magnachip’s Automotive Solutions at https://www.magnachip.com/automotive-solutions.

 

Related Articles

Magnachip Commences Full-Scale Mass Production of New 30V MXT LV MOSFET for Electric Power Steering Systems

Magnachip Targets Electric Vehicle Market with New 1200V and 650V IGBTs Featuring Advanced Field Stop Trench Technology   

 

 

 

In the Media

Magnachip Boosts Its Extensive Automotive Product Lineup With the Release of a New 40V MXT MV MOSFET

– Developed with highly rugged trench MOSFET technology, the new 30V MXT LV MOSFET ensures a stable power supply for electric power steering

 

SEOUL, South Korea, December 18, 2023 – Magnachip Semiconductor Corporation (“Magnachip” or “Company”) (NYSE: MX) announced today that the Company has begun full-scale mass production of its new 30V MXT LV Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs)* used in Electronic Control Units (ECUs) of Electric Power Steering (EPS) systems. This MOSFET product is being used by a global automaker.

Magnachip’s new automotive 30V MXT LV MOSFET

 

The new 30V MXT LV MOSFET provides a stable power supply to EPS, assisting a vehicle’s directional control through an electric motor. This product also adheres to rigorous AEC-Q101 standards and guarantees a wide operating junction temperature range between -55°C to 175°C.

The new product incorporates a highly rugged trench MOSFET structure in a thick gate oxide, which offers low resistance and excellent switching characteristics. These features reduce switching noise in applications and enhance system performance with high power efficiency. Additionally, the reduced product size, enabled by applying a PDFN 33 package of 3.3mm x 3.3mm, facilitates flexible design options for ECUs.

“Magnachip’s new compact and highly reliable MOSFET for EPSs showcases our differentiated technological capabilities,” said YJ Kim, CEO of Magnachip. “We will actively expand in the automotive sector with our innovative power solutions and stringent quality control procedures.”

 

 

 

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* MXT LV MOSFET (Magnachip eXtreme Trench Low Voltage MOSFET): Magnachip’s cutting-edge product portfolio of 12~40V trench MOSFETs

 

 

Related Links

Power Solutions > MXT MOSFETs > 30V

 

 

In the Media

   Magnachip Commences Full-Scale Mass Production of New 30V MXT LV MOSFET for Electric Power Steering Systems

 

– The company expands its slim form factor product portfolio by introducing two 650V SJ MOSFETs packaged in a PDFN88

 

SEOUL, South Korea, October 31, 2023 – Magnachip Semiconductor Corporation (“Magnachip” or “Company”) (NYSE: MX) announced today that the Company has begun mass production of two new 650V Super Junction Metal-Oxide-Semiconductor Field-Effect Transistors (SJ MOSFETs) offerings.

 

These two 650V SJ MOSFETs (MMUB65R090RURH, MMUB65R115RURH) utilize an innovative PDFN88 package, which significantly reduces their thickness and size. The thickness has been reduced by approximately 81% compared to D²PAK products and 63% compared to DPAK products, while the overall footprint has been reduced to about 41% of D²PAK SJ MOSFETs.

These new SJ MOSFETs — upgraded by the PDFN88 package — offer excellent design flexibility, efficient heat dissipation, and low R_DS(on) (the resistance value between the drain and the source of MOSFETs during on-state operation) characteristics. As a result, they are well-suited for various applications that require compact size and high efficiency, such as OLED TVs, servers, lighting products, laptop chargers and adapters.

 

 

“Magnachip will continue to develop high-performance power solutions enhanced by new packaging technology, building upon the successful mass production of these 650V SJ MOSFET products,” said YJ Kim, CEO of Magnachip. “We aim to drive expansion in the electronics market through our extended product portfolio and rigorous quality control.”

 

 

Related Links

Power Solutions > SJ MOSFETs > 650V

 

 

In the Media

     Magnachip Commences Mass Production of Two New 650V SJ MOSFETs with a Slim Form Factor

 

– The new 600V SJ MOSFET achieves a low R_DS(on) of 175mΩ and effectively meets the technical requirements of servers and OLED TVs

 

SEOUL, South Korea, October 30, 2023 – Magnachip Semiconductor Corporation (“Magnachip” or “Company”) (NYSE: MX) announced today that the Company released its 6^th-generation 600V Super Junction Metal Oxide Semiconductor Field Effect Transistor (SJ MOSFET) enhanced with microfabrication technology.

 

This 6^th-generation 600V SJ MOSFET (MMD60R175S6ZRH) was built on the 180nm microfabrication process and Magnachip’s latest design technology. This sophisticated technology improves upon the previous generation of SJ MOSFETs by narrowing the cell-pitches by 50% and lowering the R_DS(on) (On resistance: the resistance value between the drain and the source of MOSFETs during on-state operation) by 42%. As a result, this product comes in the same Decawatt Package (DPAK), while offering the low R_DS(on) of 175mΩ and outstanding power density.

Furthermore, the total gate charge is lowered by approximately 29% compared to the previous generation, resulting in reduced switching loss and enhanced power efficiency. The power efficiency is in fact one of the key features of this product, as it gives product designers flexibility with regards to various applications. In addition, a Zener diode is embedded between the gate and the source to strengthen the ruggedness and reliability of the MOSFET in an application and prevent it from sustaining damage caused by external surges or electrostatic discharges.

With its high efficiency, flexible design and reliability, this new 600V SJ MOSFET can be used in a wide range of applications, such as servers, OLED TVs and laptop fast chargers. Omdia, a global market research firm, estimates that worldwide server shipments will grow by 8% annually from 2023 to 2027, while global OLED TV shipments will increase 11% every year, reaching a total of 9.3 million units in 2027.

“Following the launch of this MOSFET, Magnachip plans to unveil additional 6^th-generation SJ MOSFETs, including those with a fast recovery body diode, in 2024,” said YJ Kim, CEO of Magnachip. “Aligned with customer demand, our technical innovation will further strengthen our industry presence and global market penetration.”

 

 

Related Links

Power Solutions > SJ MOSFETs > 600V

 

 

In the Media

     Magnachip Introduces 6th-Generation 600V SJ MOSFET Developed with Cutting-Edge Microfabrication Technology

– The company expands its 8^th-generation MXT MV MOSFET product portfolio with the addition of newly packaged 150V MXT MV MOSFETs in D²PAK-7L and PDFN56

 

SEOUL, South Korea, October 10, 2023 – Magnachip Semiconductor Corporation (“Magnachip” or “Company”) (NYSE: MX) announced today the launch of two new 150V *MXT MV Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs), using its 8^th-generation trench MOSFET technology.

 

Energy efficiency is crucial in high-power devices for reducing power consumption and ensuring stability. These newly released 8^th-generation 150V MXT MV MOSFETs (MDES15N056PTRH, MDU150N113PTVRH) were developed by leveraging Magnachip’s cutting-edge trench MOSFET technology. In particular, the R_DS(on) (the resistance value between the drain and the source of MOSFETs during on-state operation) of MDES15N056PTRH was reduced by 22% compared to the previous generation, thereby significantly enhancing energy efficiency in applications.

By improving the core cell and termination design, the Figure of Merit (FOM: R_DS(on) x Qg) of MDES15N056PTRH and MDU150N113PTVRH has been improved by 23% and 39%, respectively, compared to the previous version. Furthermore, the adoption of surface-mount type packages, such as D²PAK-7L (TO-263-7L) and PDFN56, reduces MOSFET sizes, enabling flexible design of various applications, such as motor controllers, battery management systems (BMSs), residential solar inverters and industrial power supplies.

“Following the introduction of five 8^th-generation 200V and 150V MOSFETs last year, we are pleased to now release two additional 150V MXT MV MOSFET product offerings in new packages,” said YJ Kim, CEO of Magnachip. “Magnachip will continue to expand its high-efficiency MXT MOSFET product portfolio, including new releases based on 180nm microfabrication technology in the near future.”

 

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*MXT MV MOSFET (Magnachip eXtreme Trench Medium Voltage MOSFET): Magnachip’s cutting-edge product portfolio of 40~200V trench MOSFETs

 

Related Links

Power Solutions > MXT MOSFETs > 150V

 

 

In the Media

     Magnachip Unveils New 8th-Generation 150V MXT MV MOSFETs

     Magnachip Introduces More MOSFET Package Types

– Magnachip commences full-scale mass production of 1200V and 650V IGBTs for PTC heaters of electric vehicles

 

SEOUL, South Korea, September 11, 2023 – Magnachip Semiconductor Corporation (“Magnachip” or “Company”) (NYSE: MX) announced today the launch of its 1200V and 650V Insulated Gate Bipolar Transistors (IGBTs), designed for the positive temperature coefficient (PTC) heaters of electric vehicles (EVs).

 

Built upon Magnachip’s cutting-edge Field Stop Trench technology, the newly introduced AMBQ40T120RFRTH (1200V) and AMBQ40T65PHRTH (650V) offer a minimum short-circuit withstand time of 10µs. This remarkable level of ruggedness enables PTC heaters to be protected from a permanent failure in the event of overcurrent conditions.

Furthermore, the thick and large heat sink of the TO-247 package allows these new IGBTs to excel in heat dissipation. Therefore, these IGBTs are well-suited for applications requiring high power and efficiency, such as both the upper and lower sides of power management integrated circuits of PTC heaters.

“Since early last year, Magnachip has released high-performance automotive power solutions that adhere to the stringent AEC-Q101 standards,” said YJ Kim, CEO of Magnachip. “Now that we have successfully released our first IGBT products for EVs, we will continue to expand our product lineup to meet the diverse needs of the EV market and cater to the demands of our valued customers.”

 

Related Links

Power Solutions > IGBT Chip for Standard Module > 1200V

 

 

In the Media

    Magnachip Targets Electric Vehicle Market with New 1200V and 650V IGBTs Featuring Advanced Field Stop Trench Technology

SEOUL, South Korea, July 10, 2023 – Magnachip Semiconductor Corporation (“Magnachip” or “Company”) (NYSE: MX) announced today that the Company has released four new MXT LV Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs)^*, using Super-Short Channel technology, to further expand Magnachip’s seventh-generation MXT LV MOSFET line-up for battery protection circuits of mobile devices.

 

 

Super-Short Channel is Magnachip’s latest design technology to reduce R_on (the resistance of MOSFETs during on-state operation) by shortening the channel length between the source and the drain. The R_on of these new MOSFETs has been reduced by 24~40%, compared to previous generations, and as a result, the battery performance is improved with low power losses when a battery is charging or discharging.

In addition, Magnachip provides customized design service for these products, based on the application specifications and battery capacities, so the sizes of the MOSFETs can be reduced by 5 to 20% respectively.

With these technical capabilities, flexible design and compact size options, the extended MXT LV MOSFET line-up satisfies the various technical requirements of a wide range of mobile devices, from premium foldable phones to wireless earphones.

“Magnachip has released five new MXT LV MOSFETs for battery protection circuits so far this year,” said YJ Kim, CEO of Magnachip.  “We will continue to create premium MOSFETs that offer great power efficiency and outstanding performance for mobile devices to solidify our presence in the market.”

 

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^* MXT LV MOSFET (Magnachip eXtreme Trench Low Voltage MOSFET): Magnachip’s cutting-edge product portfolio of 12~40V trench MOSFETs

 

Product features

• 7^th–generation silicon trench technology
• Reduced R_on by approximately 24%~40% compared to the previous generations
• Enhanced switching speed through low total gate charge
• Outstanding thermal properties
• Solutions for a wide range of mobile devices

– The 40V MXT MOSFET with R_DS(on) as low as 1.4mΩ enables effective kinetic energy recovery in cars

 

 SEOUL, South Korea, June 12, 2023 – Magnachip Semiconductor Corporation (“Magnachip” or “Company”) (NYSE: MX) announced today that the Company has begun mass production of its new 40V MXT Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET)1 for automotive energy recovery systems. This product is used in the automobile of a global automaker.

 

 

An automotive energy recovery system stores a vehicle’s kinetic energy while braking and uses the recovered energy for functions such as air conditioning or audio systems afterwards. Therefore, this feature improves fuel economy and reduces emissions.

Built on a Power Dual Flat No-lead (PDFN) 56 package with enhanced design of the core cells and terminations, the 40V MXT MOSFET (AMDU040N014VRH) offers R_DS(on)2 as low as 1.4mΩ to enhance the efficiency of kinetic energy recovery. In addition, a guaranteed operating junction temperature up to 175°C and a high level of avalanche ruggedness increase the power density and efficiency of the energy recovery system.

With the application of the PDFN56 package, the size of this new MOSFET was reduced by approximately 80%, as compared to other 40V MOSFET products designed with a Decawatt Package (DPAK). As a PDFN56 package is widely used in the automotive sector, the new product is well-suited for various applications such as reverse voltage protection circuits and brushless direct current motors of internal combustion engines and regenerative braking systems of electric vehicles.

“We are pleased to deliver another innovative automotive power solution, which is fully AEC – Q101 qualified for its performance and stability,” said YJ Kim, CEO of Magnachip. “Leveraging our heritage of innovative technology, Magnachip will continue to develop premium products that satisfy the diverse and changing market requirements of the automotive market.”

 

 

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¹ MXT MOSFET (Magnachip eXtreme Trench MOSFET): Magnachip’s cutting-edge product portfolio of trench MOSFETs, including low and medium voltage (12V to 200V) MOSFETs

² R_DS(on): On resistance, the resistance value between the drain and the source of MOSFETs during on-state operation

 

– Magnachip introduces new 600V SJ MOSFET with R_DS(on)* as low as 44mΩ for EV chargers and servers

SEOUL, South Korea, May 2, 2023 /PRNewswire/ — Magnachip Semiconductor Corporation (“Magnachip” or “Company”) (NYSE: MX) announced today that the Company has released a new family of 600V Super Junction Metal Oxide Semiconductor Field Effect Transistors (SJ MOSFETs) consisting of nine distinct products featuring proprietary design technology.

 

 

Magnachip’s proprietary design provides specific on-resistance (R_SP) reduction of about 10%, and this result was achieved while maintaining the same cell-pitches of previous generation MOSFETs.

In addition, the new product family of 600V SJ MOSFETs is equipped with a fast recovery body diode. This diode technology significantly enhances system efficiency with reduced reverse recovery time (t_rr) and switching loss. Therefore, the figure of merit to evaluate general performance of MOSFETs was improved by more than 10% compared to the previous generation. As such, these 600V SJ MOSFETs can be used widely in industrial applications, such as solar inverters, energy storage systems, uninterruptible power supply systems, and a variety of electronics.

Among these new MOSFETs, the MMQ60R044RFTH product offers an exceptionally low R_DS(on) of 44mΩ, making it an optimal choice for electric vehicle chargers and servers. Omdia, a global market research firm, estimates that the compound annual growth rates of Si MOSFET markets for hybrid & electric vehicles and servers will be 11% and 7%, respectively, from 2023 to 2026.

“Now that we have introduced these 600V SJ MOSFET products, we are aiming to unveil new 650V and 700V SJ MOSFET products with fast recovery body diode in the second half of 2023,” said YJ Kim, CEO of Magnachip. “These new MOSFETs represent a notable achievement for the Company, and we will build upon this success to deliver next-generation power solutions for rapidly changing market requirements and customer expectations.”

 

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* R_DS(on): On resistance, the resistance between the drain and the source of MOSFETs during on-state operation.

 

New Family of 600V SJ MOSFET Products

 

Related Link

Power Solutions > SJ MOSFETs > 600V

 

 

In the Media

     Magnachip Debuts New Family of 600V SJ MOSFET Products Featuring Fast Recovery Body Diodes