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SEOUL, South Korea, July 10, 2023 – Magnachip Semiconductor Corporation (“Magnachip” or “Company”) (NYSE: MX) announced today that the Company has released four new MXT LV Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs)^*, using Super-Short Channel technology, to further expand Magnachip’s seventh-generation MXT LV MOSFET line-up for battery protection circuits of mobile devices.

Super-Short Channel is Magnachip’s latest design technology to reduce R_on (the resistance of MOSFETs during on-state operation) by shortening the channel length between the source and the drain. The R_on of these new MOSFETs has been reduced by 24~40%, compared to previous generations, and as a result, the battery performance is improved with low power losses when a battery is charging or discharging.

In addition, Magnachip provides customized design service for these products, based on the application specifications and battery capacities, so the sizes of the MOSFETs can be reduced by 5 to 20% respectively.

With these technical capabilities, flexible design and compact size options, the extended MXT LV MOSFET line-up satisfies the various technical requirements of a wide range of mobile devices, from premium foldable phones to wireless earphones.

“Magnachip has released five new MXT LV MOSFETs for battery protection circuits so far this year,” said YJ Kim, CEO of Magnachip.  “We will continue to create premium MOSFETs that offer great power efficiency and outstanding performance for mobile devices to solidify our presence in the market.”

^* MXT LV MOSFET (Magnachip eXtreme Trench Low Voltage MOSFET): Magnachip’s cutting-edge product portfolio of 12~40V trench MOSFETs

Product features

• 7^th–generation silicon trench technology
• Reduced R_on by approximately 24%~40% compared to the previous generations
• Enhanced switching speed through low total gate charge
• Outstanding thermal properties
• Solutions for a wide range of mobile devices